by Dept of Chemistry, U of Toronto .
Written in English
MICR copy on microfiche (1 microfiche).
1. Introduction. Conjugated polymers have attracted great attention since the discovery of electrical conductivity in chemically doped polyacetylene, because they combine the electrical and optical properties of semiconductors with the processing advantages of ial applications are in the fields of organic light emitting diodes (OLEDs), organic solar cells (OPV), organic field Cited by: Electrical and photoelectric properties of electrochemically fabricated SnO2/CdZnS/CdTe solar cells Article in Semiconductors 40(12) December with 20 Reads How we measure 'reads'. The conductivity of an electrochemically oxidized film of undecamer was found to be around 1 S cm −1. A thin-film field effect transistor was preliminary fabricated with neutral undecamer films and the hole mobility was determined. For reproduction of material from all other RSC journals and books: Synthesis and electrical properties. Books. Publishing Support. Login. Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon. V. Lehmann and H. Föll. Three‐dimensional structures in silicon are increasingly coming into use for the fabrication of mechanical and electrical devices. The fabrication of deep trenches is one of the most.
Tuning the Characteristics of Electrochemically Fabricated Gold Nanowires controllable crystallographic and morphological properties using etched ion track templates. book . In this study, we investigated the nanoscale physical, mechanical and electrical properties of P3HT and electrochemically doped P3HT thin films. Thin films were fabricated and doped using the materials shown in Fig. 2a. The fabricated P3HT thin films were doped electrochemically with TBAP for one second at 4 V; see Materials and methods. Solar cells based on SnO2/CdZnS/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = °C and τ. Electrical properties of MOS structures were investigated by charge version of DLTS and capacitance–voltage measurements. Low density of interface defect states below the level of ∼10 11 eV −1 cm −2 was determined on structures with the SiO 2 layer prepared electrochemically, passivated in aqueous HCN solutions, and annealed in vacuum.